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US 6,143,656 AGranted
Slurry for chemical mechanical polishing of copper
AssigneeAdvanced Micro Devices, Inc.
InventorsKai Yang, Steven Avanzino, Christy Mei-Chu Woo
Life of this patent
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Abstract
Copper metalization is planarized by CMP employing a slurry which avoids scratching the copper surface and is highly selective to the underlying barrier layer. Embodiments include CMP a copper filled damascene opening using a slurry comprising about 0.2 to about 0.7 wt. % Al.sub.2 O.sub.3 and about 0.2 to about 2 wt. % oxalic acid to achieve a RMS no greater than about 10 .ANG..
Claims12
A method of manufacturing a semiconductor device, the method comprising:
- forming a damascene opening in a dielectric layer;
- depositing a barrier layer lining the opening and on the upper surface of the dielectric layer;
- depositing copper (Cu) or a Cu alloy filling the opening and on the barrier layer;
- and chemical mechanical polishing (CMP) the (Cu) or Cu alloy with a slurry containing alumina (Al.sub.2 O.sub.3) and oxalic acid substantially stopping on the barrier layer.
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A method of manufacturing a semiconductor device, the method comprising:
- chemical mechanical polishing (CMP) copper (Cu) or a Cu alloy with a slurry containing:
- about 0.2 to about 0.7 wt. % alumina (Al.sub.2 O.sub.3);
- and
- about 0.3 to about 1 wt. % oxalic acid.
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Dependencies are inferred from the claim text.