Nonvolatile reprogrammable interconnect cell with programmable buried source/drain in sense transistor

An array of programmable interconnects for selectively connecting circuit nodes in an integrated circuit comprising a plurality of interconnect cells arranged in rows and columns and each programmable to connect and disconnect circuit nodes,

• each cell having a first field effect transistor aligned with first field effect transistors of cells in a first column, and a second field effect transistor aligned with second field effect transistors of cells in a second column, the first and second field effect transistors of a cell being aligned with first and second field effect transistors of cells in the same row, source/drains of the second field effect transistor comprising buried doped layers in a semiconductor substrate,
• each cell having a first polysilicon line running between and spaced from source/drains of the first field effect transistor and between and spaced from source/drains of the second field effect transistor and functioning as a common floating gate for the first and second field effect transistors, a second polysilicon line overlying the first polysilicon line and functioning as a common control gate for the first and second field effect transistors, the second polysilicon line extending to other cells in a row, whereby programming of a cell is effected by applying voltages to the source/drains of the second field effect transistor and to the second polysilicon line, and the sensing of conducting and nonconducting states of a node is by selectively monitoring conductance of the second field transistor of the cell through first and second metal lines.