Method of forming recessed container cells by wet etching conductive layer and dissimilar layer formed over conductive layer

A method of forming a recessed microelectronic structure, the method comprising the steps of:

• (a) forming a container form in a substrate, the substrate having an upper surface;
• (b) disposing a layer of conductive material within the container form and over the upper surface of the substrate;
• (c) disposing a layer of dissimilar material over the layer of conductive material;
• (d) removing the layer of dissimilar material and the layer of conductive material from the upper surface of the substrate by chemical mechanical planarization;
• and
• (e) wet etching a portion of the layer of conductive material remaining in the container form to recess the layer of conductive material below the upper surface of the container form.

A method of forming a recessed microelectronic structure, the method comprising the steps of:

• (a) forming a container in a dielectric material, the dielectric material having an upper surface;
• (b) disposing a layer of conductive material within the container and over the upper surface of the dielectric material;
• (c) disposing a layer of photoresist over the layer of conductive material;
• (d) removing the layer of photoresist and the layer of conductive material from the upper surface of the dielectric material using chemical mechanical planarization;
• and
• (e) wet etching a portion of the layer of conductive material remaining in the container form to recess the layer of conductive material below the upper surface of the container form.

A method of forming a recessed microelectronic structure, the method comprising the steps of:

• (a) forming a container form in a dielectric material, the dielectric material having an upper surface;
• (b) disposing a layer of polysilicon within the container form and over the upper surface of the dielectric material;
• (c) disposing a layer of photoresist over the layer of polysilicon;
• (d) removing the layer of photoresist and the layer of polysilicon from the upper surface of the dielectric material, while leaving a portion of the layer of photoresist in the container form, using chemical mechanical planarization;
• and
• (e) wet etching a portion of the layer of polysilicon remaining in the container form to recess the layer of polysilicon below the upper surface of the container form.

A method of forming a capacitor in a microelectronic circuit, the method comprising the steps of:

• (a) forming a container in a substrate, the substrate having an upper surface;
• (b) disposing a first layer of conductive material within the container and over the upper surface of the substrate;
• (c) disposing a layer of photoresist over the first layer of conductive material;
• (d) removing the layer of photoresist and the first layer of conductive material from the upper surface of the substrate using chemical mechanical planarization;
• (e) wet etching a portion of the first layer of conductive material remaining in the container form to recess the first layer of conductive material below the upper surface of the container form;
• (f) removing the layer of photoresist remaining in the container form;
• (g) disposing a layer of dielectric material over the recessed first layer of conductive material and over the upper surface of the substrate;
• and
• (h) disposing a second layer of conductive material over the layer of dielectric material.

A method of forming a capacitor in a microelectronic circuit, the method comprising the steps of:

• (a) forming a container form in a substrate, the substrate having an upper surface;
• (b) disposing a first layer of conductive material within the container form and over the upper surface of the substrate;
• (c) disposing a layer of photoresist over the first layer of conductive material;
• (d) removing at least a portion of the layer of photoresist and at least a portion of the first layer of conductive material from the upper surface of the substrate to expose at least a portion of the upper surface of the substrate adjacent the container;
• (e) wet etching a portion of the first layer of conductive material remaining in the container to recess the first layer of conductive material below the upper surface of the container form;
• (f) removing the layer of photoresist remaining in the container form;
• (g) disposing a layer of dielectric material over the recessed first layer of conductive material and over the upper surface of the substrate;
• and
• (h) disposing a second layer of conductive material over the layer of dielectric material.

A method of forming a capacitor in a microelectronic circuit, the method comprising the steps of:

• (a) forming a container form in a first layer of dielectric material, the first layer of dielectric material having an upper surface;
• (b) disposing a first layer of polysilicon within the container form and over the upper surface of the first layer of dielectric material;
• (c) disposing a layer of photoresist over the first layer of polysilicon;
• (d) removing the layer of photoresist and the first layer of polysilicon from the upper surface of the first layer of dielectric material using chemical mechanical planarization;
• (e) wet etching a portion of the first layer of polysilicon remaining in the container form to recess the first layer of polysilicon below the upper surface of the container form;
• (f) removing the layer of photoresist remaining in the container form;
• (g) disposing a second layer of dielectric material over the recessed first layer of polysilicon and over the upper surface of the substrate;
• and
• (h) disposing a second layer of polysilicon over the second layer of dielectric material.