Method for forming integrated circuit capacitors including dual layer electrodes
AssigneeSamsung Electronics Co., Ltd.
InventorsMan-sug Kang, Seung-joon Ahn
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Abstract
A method for forming an integrated circuit capacitor includes the steps of forming a first electrode layer on a substrate wherein the first electrode has a first dopant concentration, and forming a second electrode layer on the first electrode layer opposite the substrate. The second electrode layer has a second dopant concentration different from the first dopant concentration. In addition, a portion of the second electrode layer is converted to a hemispherical grain layer. More particularly, the first dopant concentration is greater than the second dopant concentration. Related structures are also discussed.
Claims33
A method for forming an integrated circuit capacitor, said method comprising the steps of:
- forming a first electrode layer on a substrate wherein said first electrode layer has a first dopant concentration;
- forming a second electrode layer on said first electrode layer opposite said substrate wherein said second electrode layer has a second dopant concentration different from said first dopant concentration;
- converting a portion of said second electrode layer having said second dopant concentration to a hemispherical grain layer;
- forming a second hemispherical grain layer on sidewalls of said first electrode layer having said first dopant concentration wherein grains of said second hemispherical grain layer are smaller than those of said first hemispherical grain layer.
A method for forming an integrated circuit capacitor, said method comprising the steps of:
- forming a first electrode layer on a substrate wherein said first electrode layer has a first dopant concentration;
- forming a second electrode layer on said first electrode layer opposite said substrate wherein said second electrode layer has a second dopant concentration different from said first dopant concentration;
- converting a portion of said second electrode layer to a hemispherical grain layer;
- and
- forming a spacer along sidewalls of said first electrode layer wherein said spacer has a third dopant concentration different from said first dopant concentration, and wherein said converting step comprises converting a portion of said spacer to said hemispherical grain layer, wherein said first dopant concentration is greater than said second and third dopant concentrations.
A method for forming an integrated circuit capacitor, said method comprising the steps of:
- forming an electrode layer on a substrate wherein said electrode layer has a surface opposite said substrate and sidewalls;
- forming a first hemispherical grain layer on said surface of said electrode layer wherein said first hemispherical grain layer has a first grain size;
- and
- forming a second hemispherical grain layer on said sidewalls of said electrode layer wherein said second hemispherical grain layer has a second grain size different from said first grain size wherein said first and second hemispherical grain silicon layers are formed simultaneously.
Dependencies are inferred from the claim text.