Edge termination structure

An edge termination structure for a semiconductor device comprising:

• a body of semiconductor material of a first conductivity type, the body of semiconductor material having a major surface;
• a doped region of a second conductivity type formed in the body of semiconductor material;
• a trench structure at the major surface of the body of semiconductor material, wherein the trench structure has a surface and vertical sidewalls that extend from the major surface, the vertical sidewalls being devoid of a PN junction, and the trench structure being separated from the doped region by a first distance and extending vertically into the body of semiconductor material a second distance;
• and
• a conductive layer formed along the surface of the trench structure, wherein the conductive layer is made from a different material than the body of semiconductor material, wherein the semiconductor device has a breakdown voltage of 300 volts to 2500 volts.

A semiconductor device comprising:

• a semiconductor substrate comprising a semiconductor material of a first conductivity type;
• a PN junction in the semiconductor substrate;
• a trench structure physically separated from the PN junction by a distance, wherein the trench structure has vertical sidewalls that expose only the semiconductor material of the first conductivity type, and the trench structure increases a breakdown voltage of the PN junction;
• and
• a conductive layer formed along the surface of the trench structure, wherein the conductive layer is made from a different material than the body of semiconductor material, and wherein a portion of the conductive layer contacts a portion of the semiconductor substrate.

A PN junction comprising:

• a semiconductor substrate of a first conductivity type;
• a doped region of a second conductivity type forming a PN junction and a depletion region around the doped region;
• and
• a trench structure formed in the semiconductor substrate and having a surface covered with a conductive material, the trench structure having vertical sidewalls that expose only the semiconductor substrate of the first conductivity type;
• and
• a conductive layer formed along the surface of the trench structure, wherein the conductive layer is made from a different material than the body of semiconductor material, and wherein a portion of the conductive layer contacts the body of semiconductor material.