Apparatus and methods for measuring wavefront aberrations of a microlithography projection lens
AssigneeNikon Corporation
InventorsJun Suzuki, Takashi Gemma, Yutaka Ichihara
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AssigneeNikon Corporation
InventorsJun Suzuki, Takashi Gemma, Yutaka Ichihara
Estimating the term…
Apparatus and methods are disclosed for measuring wavefront aberrations microlithography projection lenses such as i-line or excimer laser projection lenses. The apparatus comprises an argon-ion laser irradiating a Fizeau surface that reflects reference light and transmits test light. The test light is reflected by a spherical reflecting surface to pass twice through the test lens and the Fizeau surface, to interfere with the reference light. A piezoelectric element changes the fringes slightly. An image-pickup device receives the interference fringes and outputs data to a processor that calculates corresponding wavefront aberrations of the test lens. For testing an i-line lens, the argon laser can be a single-mode, 363.8 nm laser. For testing a lens used with a KrF excimer laser, the argon laser can emit second-harmonic light at 248.25 nm.
A wavefront aberration-measuring apparatus for measuring wavefront aberrations of an exposure projection lens for an exposure device for microlithography, the exposure projection lens being selected as a test lens to be observed with the apparatus, the apparatus comprising:
A wavefront aberration-measuring method for measuring wavefront aberrations of an exposure projection lens for a microlithography apparatus, the exposure projection lens being selected as a test lens to be observed, the method comprising the steps:
Dependencies are inferred from the claim text.