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US 5,858,851 AGranted
Manufacturing method of electrode
AssigneeSharp Kabushiki Kaisha
InventorsSatoru Yamagata, Shigeo Onishi, Jun Kudo
Life of this patent
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Abstract
A titanium film and a titanium nitride film are sequentially formed on a polysilicon plug. Next, the titanium nitride film is oxidized to form an oxidized titanium nitride film. Thereafter, a lower electrode and a PZT film are formed. A diffusion barrier layer is prepared from the oxidized titanium nitride film and is oxidized before the lower electrode is formed. As a result, unlike in prior art, the diffusion barrier layer is not oxidized after the lower electrode is formed. Peel-off between the diffusion barrier layer and the lower electrode due to the oxidation is thus prevented.
Claims8
A method of manufacturing an electrode including:
- an electrode part;
- and
- a conductive diffusion barrier layer, provided on a surface of the electrode part for stopping an impurity from passing,
- said method comprising the steps of:
- providing the diffusion barrier layer at least whose interface with the electrode part is composed of a metal nitride film;
- (1) providing a peeling prevention film for preventing peeling of the electrode part and the diffusion barrier layer, by oxidizing a contact surface of the metal nitride film and the electrode part;
- and
- (2) providing, after the step (1), the electrode part on the interface of the diffusion barrier layer.
5 more elements
A method of manufacturing a capacitor including:
- an electrode having an electrode part, and a conductive diffusion barrier layer provided on a surface of the electrode part for stopping an impurity from passing;
- and
- a dielectric film provided on another surface of the electrode part having ferroelectric properties or a high dielectric constant,
- said method comprising the steps of:
- providing the diffusion barrier layer at least whose interface with the electrode part is composed of a metal nitride film;
- (1) providing a peeling prevention film for preventing peeling of the electrode part and the diffusion barrier layer, by oxidizing a contact surface of the metal nitride film and the electrode part;
- (2) providing, after the step (1), the electrode part on the interface of the diffusion barrier layer;
- and
- (3) providing, after the step (2), the dielectric film on a side opposite the interface of the electrode part.
6 more elements
A method of manufacturing a semiconductor device comprising:
- a capacitor including
- an electrode having an electrode part, and a conductive diffusion barrier layer provided on a surface of the electrode part for stopping an impurity from passing, and
- said capacitor including a dielectric film provided on another surface of the electrode part having ferroelectric properties or a high dielectric constant;
- and
- a semiconductor material for controlling charge and discharge of the capacitor, said method comprising the steps of:
- providing the diffusion barrier layer at least whose interface with the electrode part is composed of a metal nitride film;
- (1) providing a peeling prevention film for preventing peeling of the electrode part and the diffusion barrier layer, by oxidizing a contact surface of the metal nitride film and the electrode part;
- (2) providing, after step (1), the electrode part on the interface of the diffusion barrier layer;
- (3) providing, after the step (2), the dielectric film on a side opposite the interface of the electrode part;
- and
- (4) providing the semiconductor which is to be connected to the electrode part via the diffusion barrier layer.
8 more elements
A method of manufacturing an electrode, comprising the steps of:
- providing an electrode part;
- providing a conductive diffusion barrier layer on a surface of the electrode, said conductive diffusion barrier layer preventing an impurity from passing therethrough, an interface of said diffusion barrier layer and said electrode part comprising a metal nitride film;
- oxidizing a contact surface of said metal nitride film and the electrode part to provide a peeling prevention film, said peeling prevention film preventing peeling of the electrode part from the diffusion barrier layer;
- and
- providing the electrode part on the interface of the diffusion barrier layer after the oxidizing step.
2 more elements
A method of manufacturing a capacitor, comprising the steps of:
- providing an electrode comprising an electrode part and a conductive diffusion barrier layer provided on a surface of the electrode part, said diffusion barrier layer preventing an impurity from passing therethrough, and whose interface with said electrode part comprises a metal nitride film;
- providing a dielectric film on another surface of the electrode part, said dielectric film having at least one of a high dielectric constant and ferroelectric properties;
- oxidizing a contact surface of the metal nitride film and the electrode part to form a peeling prevention film, said peeling prevention film preventing peeling between the electrode part and the diffusion barrier layer;
- disposing the electrode part on the interface of the electrode and the diffusion barrier layer after said oxidizing step;
- and
- disposing the dielectric film on the side opposite the interface of the electrode part.
3 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a capacitor comprising an electrode including an electrode part and a conductive diffusion barrier layer provided on a surface of the electrode part, said diffusion barrier layer preventing an impurity from passing therethrough, an interface of said diffusion barrier layer with said electrode part comprising a metal nitride film, the capacitor having a dielectric film disposed on another surface of the electrode part, said dielectric film having at least one of a high dielectric constant and ferroelectric properties;
- oxidizing a contact surface of the metal nitride film and the electrode part to form a peeling prevention film for preventing peeling between the electrode part and the diffusion barrier layer;
- disposing the electrode part on the interface of the diffusion barrier layer and the electrode after the oxidizing step;
- disposing the dielectric film on a side opposite the interface of the electrode part;
- and
- connecting the semiconductor device to the electrode part via the diffusion barrier layer.
3 more elements
A method of manufacturing an electrode, comprising the steps of:
- forming an electrode part;
- forming a conductive diffusion barrier layer on a surface of the electrode part, said diffusion barrier layer having an interface with the electrode part comprising a metal nitride film;
- oxidizing a contact surface of the metal nitride film and the electrode part to form a peeling prevention layer;
- and
- disposing the electrode part on the interface of the diffusion barrier layer after the oxidizing step.
2 more elements
Dependencies are inferred from the claim text.