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US 5,858,102 AGranted
Apparatus of chemical vapor for producing layer variation by planetary susceptor rotation
OwnerCharles Su-Chang Tsaiinventor
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Abstract
A chemical vapor deposition apparatus for depositing at least one layer of material with controlled substrate-to-substrate variation onto a plurality of substrates is disclosed, comprising a reactor including at least one gas inlet (40) and one gas outlet (60), a planetary susceptor rotation means (14) containing a plurality of secondary susceptors (114) for supporting and heating the substrates (110), and a heating means (50) for heating the secondary susceptors.
Claims18
A chemical vapor deposition apparatus for depositing at least one layer of material onto a plurality of substrates, comprising:
- a reactor including at least one gas inlet and at least one gas outlet,
- a planetary susceptor rotation means containing a plurality of secondary susceptors for supporting said substrates,
- wherein said rotation means is incorporated into said reactor,
- wherein said rotation means allows simultaneously at least two significantly different rotation rates for said secondary susceptors.
1 more element
An apparatus comprising:
- a reactor,
- a planetary susceptor rotation means containing a plurality of secondary susceptors for supporting a plurality of substrates,
- wherein said rotation means is incorporated into said reactor,
- wherein said rotation means allows simultaneously at least two significantly different rotation rates for said secondary susceptors.
1 more element
An apparatus comprising:
- a reactor,
- a planetary susceptor rotation means containing a plurality of secondary susceptors for supporting a plurality of substrates,
- wherein said rotation means is incorporated into said reactor,
- wherein said rotation means allows simultaneously at least two significantly different rotation rates for said secondary susceptors, and
- heating means for heating said substrates.
2 more elements
Dependencies are inferred from the claim text.