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US 5,854,116 AGranted
Semiconductor apparatus
OwnerTadahiro Ohmi, Tadashi Shibata +1inventors
InventorsTadahiro Ohmi, Tadashi Shibata, Masaru Umeda
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Abstract
The present invention relates to a semiconductor apparatus adapted to a ultrahigh density integration process. A semiconductor apparatus of the present invention is characterized by including a high concentration impurity layer with the same type of conductivity as that of a semiconductor wafer provided on the back of the semiconductor wafer, and at least one layer of a low resistance electrode provided on said high concentration impurity layer.
Claims15
A method of forming a semiconductor device, comprising the steps of:
- forming a high concentration impurity layer on a first surface of a wafer, wherein the impurity concentration of the impurity layer is higher than that of the wafer;
- forming a low resistance layer on a surface of the high concentration impurity layer opposite the wafer;
- placing the wafer on a wafer holder such that the low resistance layer contacts the wafer holder and a secure ohmic contact is established between the wafer and the wafer holder;
- and
- forming a thin film on a second surface of the wafer opposite the low resistance layer.
2 more elements
Dependencies are inferred from the claim text.