Methods and apparatus for etching a conductive layer to improve yield
AssigneeLam Research Corporation
InventorsDavid R. Arnett, Jeffrey V. Musser
Life of this patent
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Abstract
A method in a substrate processing chamber for forming a conductive feature by etching through a conductive layer disposed above a semiconductor substrate. The method includes etching at least partially through the conductive layer using a first etch recipe to form a top portion of the conductive feature. The method further includes thereafter etching at least partially through a remaining thickness of the conductive layer using a second etch recipe different from the first etch recipe to form a bottom portion of the conductive feature. The bottom portion is disposed below the top portion. The second etch recipe is configured to yield a sloped etch foot in the bottom portion of the conductive feature.
Claims25
In a substrate processing chamber, a method for forming a conductive feature by etching through a conductive layer disposed above a semiconductor substrate, said method comprising:
- etching at least partially through said conductive layer using a first etch recipe to form a top portion of said conductive feature;
- and
- thereafter etching at least partially through a remaining thickness of said conductive layer using a second etch recipe different from said first etch recipe to form a bottom portion of said conductive feature, said bottom portion being disposed below said top portion, said second etch recipe being configured to yield a sloped etch foot in said bottom portion of said conductive feature.
An integrated circuit having components formed on a semiconductor substrate, comprising:
- a first conductive feature etched from a first conductive layer disposed above said semiconductor substrate;
- an insulating layer disposed above said first conductive feature, said insulating layer having therein a via;
- a conductive plug disposed in said via, said conductive plug being electrically coupled to said first conductive feature;
- and
- a second conductive feature disposed above said via, said conductive feature being etched from a second conductive layer disposed above said insulating layer, said conductive feature being electrically coupled with said conductive plug disposed in said via and includes
- a top portion having a first etch profile and a first width, and
- a bottom portion disposed below said top portion, said bottom portion having a second etch profile different from said first etch profile, said bottom portion having a second width wider than said first width.
In a plasma processing chamber, a method for preventing damage to an underlying conductive feature while forming an overlying conductive feature out of an overlying conductive layer, said overlying conductive layer being separated from said underlying conductive feature by an insulating layer having therein a conductive plug disposed in a via, said conductive plug coupling said overlying conductive feature and said underlying conductive layer through said insulating layer, said method comprising:
- etching at least partially through said overlying conductive layer using a first etch recipe to form a top portion, said top portion having a first width;
- and
- etching at least partially through a remaining thickness of said overlying conductive layer using a second etch recipe different from said first etch recipe to form a bottom portion of said overlying conductive feature, said bottom portion having a second width larger than said first width and a diameter of said via.
Dependencies are inferred from the claim text.