Self-shielding inductor for multi-layer semiconductor integrated circuits

A self-shielding inductor for a semiconductor integrated circuit, comprising:

• a substrate having opposed first and second surfaces, the first surface disposed against a ground plane;
• an electrical conductor disposed on the second surface of the substrate in a first turn, the first turn having a first end and a second end;
• an first electrically insulating layer disposed on the second surface of the substrate and covering the first turn;
• an electrical conductor disposed on the first insulating layer in a second turn and having a first end and a second end, the first end electrically coupled to the second end of the first turn;
• an second electrically insulating layer disposed on the first insulating layer and covering the second turn;
• and
• an electrical conductor disposed on the second insulating layer in a third turn, the third turn having a first end and a second end electrically coupled to the second end of the second turn.

A self-shielding inductor with resistance equalization for a semiconductor integrated circuit, comprising:

• a plurality of electrically insulating layers;
• an electrical conductor disposed in a plurality of electrically coupled turns, the turns disposed between the insulating layers of the semiconductor integrated circuit and including a first turn disposed between a first insulating layer and a second insulating layer, and others of the plurality of turns disposed between other ones of the insulating layers, the first turn being nearer a ground plane of the integrated circuit than the other turns;
• and
• an electrical conductor disposed on the second insulating layer and electrically coupled to the first turn as a first additional layer of the first turn.

A self-shielding inductor with resistance equalization for a semiconductor integrated circuit, comprising:

• a substrate having opposed first and second surfaces, the first surface disposed against a ground plane;
• an electrical conductor disposed on the second surface of the substrate in a first turn, the first turn having a first end and a second end;
• an first electrically insulating layer disposed on the second surface of the substrate and covering the first turn;
• an electrical conductor disposed on the first insulating layer and electrically coupled to the second end of the first turn as a first additional layer of the first turn;
• an electrical conductor disposed on the first insulating layer in a second turn and having a first end and a second end, the first end electrically coupled to the second end of the first turn;
• an second electrically insulating layer disposed on the first insulating layer and covering the first additional layer of the first turn and the second turn;
• and
• an electrical conductor disposed on the second insulating layer in a third turn, the third turn having a first end and a second end electrically coupled to the second end of the second turn.

A self-shielding inductor for a semiconductor integrated circuit, comprising:

• a substrate having opposed first and second surfaces, the first surface disposed against a ground plane;
• an electrical conductor disposed on the second surface of the substrate in a first turn, the first turn having a first end and a second end;
• an first electrically insulating layer disposed on the second surface of the substrate and covering the first turn;
• and
• an electrical conductor disposed in a first spiral on the first insulating layer and having a first end and a second end, the first end electrically coupled to the second end of the first turn.