Semiconductor memory device having peripheral circuit and interface circuit fabricated on bulk region out of silicon-on-insulator region for memory cells
AssigneeNEC Corporation
InventorTakaho Tanigawa
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Abstract
A semiconductor dynamic random access memory device has a memory cell array fabricated on a silicon-on-insulator region and peripheral and interface circuits fabricated on a bulk region; even if the circuit components of the peripheral circuit are increased together with the memory cells, the bulk region effectively radiates the heat generated by the peripheral and interface circuits, thereby preventing the memory cells from a temperature rise.
Claims8
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer from a second semiconductor layer, comprising:
- a memory cell array fabricated on said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information;
- an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device;
- and
- a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information therebetween and having first logic circuits fabricated on said bulk region.
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer of about 10 nanometers to 100 nanometers thick from a second semiconductor layer, said device comprising:
- a memory cell array fabricated on said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information;
- an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device;
- and
- a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information there between and having first logic circuits fabricated on said bulk region.
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer from a second semiconductor layer, said device comprising:
- a memory cell array fabricated on said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information;
- an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device;
- and
- a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information therebetween and having address decoders, selectors, controllers for an addressing system and sense amplifiers fabricated on said bulk region.
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer from a second semiconductor layer, said first semiconductor layer having a thin portion ranging between about 10 nanometers thick and 100 nanometers thick and a thick portion ranging between about 100 nanometers thick and 150 nanometers thick, said device comprising:
- a memory cell array fabricated on said thin portion of said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information;
- an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device;
- and
- a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information therebetween and having first logic circuits fabricated on said bulk region.
Dependencies are inferred from the claim text.