US 5,708,550 A · ESD protection for overvoltage friendly input/output circuits

Abstract

An electrostatic discharge (ESD) protection circuit includes an input terminal, a power supply line and a source of reference potential. The circuit also includes a dummy supply line. A Schottky barrier diode is connected between the input terminal and the power supply line for blocking voltages from the input terminal which are greater than the power supply voltage. A first clamping structure is connected between the dummy supply line and the source of reference potential, and a second clamping structure is connected between the power supply line and the source of reference potential. A first clamping diode is connected between the input terminal and the dummy supply line and a second clamping diode is connected between the input terminal and the source of reference potential.

Claims8

Dependent claims

An ESD protection circuit comprising:

an input terminal;
power supply line for providing a power supply voltage;
a source of reference potential;
a Schottky barrier diode between the input terminal and the power supply line for blocking voltages from the input terminal which are greater than the power supply voltage;
a clamping circuit for clamping excess positive voltage at a higher voltage than the power voltage;
first clamping means between the input terminal and the clamping circuit;
and
second clamping means for clamping negative voltages at the input terminal to the source of reference potential.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

08/736,113Filed 24 Oct 1996

Granted

13 Jan 1998

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 89/601
Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]:…
H03K 19/00315
Modifications for increasing the reliability for protection: in field-effect transistor circuits
H10D 89/611
For devices having insulated gate electrodes, e.g. for IGFETs or IGBTs: using diodes as protective elements
H10D
Inorganic electric semiconductor devices

ESD protection for overvoltage friendly input/output circuits

Life of this patent

ESD protection for overvoltage friendly input/output circuits

Life of this patent

Abstract

Claims8