Semiconductor device having damascene interconnects

An interconnect structure in a semiconductor device comprising:

• a semiconductor layer;
• a first high-k layer above said semiconductor layer;
• a first insulating layer above said first high-k layer;
• and
• a plurality of interconnects above said first insulating layer with a first low-k material between said plurality of interconnects that are at a relatively close proximity.

An interconnect structure in a semiconductor device comprising:

• a semiconductor layer;
• a plurality of interconnects above said semiconductor layer, with a first low-k material between said plurality of interconnects that are at a relatively close proximity;
• a first insulating layer around said plurality of interconnects;
• and
• a first high-k layer above said plurality of interconnects.

An interconnect structure in a semiconductor device comprising:

• a semiconductor layer;
• a first high-k layer above said semiconductor layer;
• a plurality of interconnects above said first high-k layer, with a first low-k material between said plurality of interconnects that are at a relatively close proximity;
• an insulating layer around said plurality of interconnects;
• and
• a second high-k layer above said insulating layer and said plurality of interconnects.