US 5,708,302 A · Bottom electrode structure for dielectric capacitors

Abstract

An integrated circuit capacitor (20) includes a bottom electrode structure (24) having an adhesion metal portion (34), a noble metal portion (36), and a second noble metal layer (40). A process of manufacture includes annealing the adhesion metal portion (34) and the noble metal portion (36) prior to the deposition of second noble metal layer (40) for purposes of forming barrier region (38). The electrode (24) preferably contacts metal oxide layer (26), which is made of a perovskite or perovskite-like layered superlattice material. A temporary capping layer (59) is formed and removed in manufacture, which serves to increase polarization potential from the device by at least 40%.

Claims20

Dependent claims

A thin-film electrode device for use in integrated circuits, comprising:

a substrate;
a bottom electrode supported by said substrate and including an interdiffusion region including a stabilized lattice having a mixture of annealed adhesion metal and noble metal moieties,
said mixture of annealed adhesion metal and noble metal moieties produced according to a method including the steps of depositing of an adhesion metal layer on said substrate, a noble metal layer on said
adhesion metal layer, and a temporary capping layer on said noble metal layer, thereafter
annealing said adhesion metal layer, said noble metal layer, and said temporary layer, in simultaneous fashion, and thereafter removing said temporary layer;
and
a noble metal capping layer produced by depositing said noble metal capping layer over said region after said annealing step.

4 more elements

Dependencies are inferred from the claim text.

Bottom electrode structure for dielectric capacitors

Life of this patent

Bottom electrode structure for dielectric capacitors

Life of this patent

Abstract

Claims20