Multichip press-contact type semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsSatoshi Teramae, Michiaki Hiyoshi
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AssigneeKabushiki Kaisha Toshiba
InventorsSatoshi Teramae, Michiaki Hiyoshi
Estimating the term…
IGBT chips and FRD chips are arranged on the same plane so as to be press-contacted by an emitter press-contact electrode plate and a collector press-contact electrode plate at the same time. The FRD chips are arranged at a central portion, and the IGBT chips are arranged at the peripheral portion of the FRD chips. A resin substrate having an opening in its contact portion between a main surface of each of said chip and the emitter press-contact electrode plate is provided between both press-contact electrode plates. Gate press-contact electrodes are formed on the resin substrate to be electrically connected to a gate electrode of each of the IGBT chips. Also, gate wires are fixed to the resin substrate to supply a control signal for controlling the IGBT chips to the gate electrode of the IGBT chips from the gate wires through the gate press-contact electrode.
A press-contact type semiconductor device comprising:
A press-contact type semiconductor device comprising:
A press-contact type semiconductor device comprising:
A press-contact type semiconductor device comprising:
Dependencies are inferred from the claim text.