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US 5,707,784 AGranted
Method of forming chemically amplified resist pattern and manufacturing for semiconductor device by using the chemically amplified resist pattern
AssigneesFujitsu Limited, Nippon Zeon Co., Ltd.
InventorsAkira Oikawa, Hiroyuki Tanaka, Masayuki Oie, Hideyuki Tanaka, Nobunori Abe
Life of this patent
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Abstract
A chemically amplified resist pattern is formed by applying chemically amplified resist, forming thereafter a layer of an amorphous polyolefines substance thereon, then exposing the chemically amplified resist, and furthermore, developing the chemically amplified resist after removing the amorphous polyolefines substance.
Claims13
A method of forming a chemically amplified resist pattern comprising the steps of:
- applying a chemically amplified resist to a layer to be patterned;
- protecting the chemically amplified resist against reaction with ambient alkaline impurities by coating surface thereof with an amorphous polyolefin substance having hydrophobicity;
- heating said chemically amplified resist and said amorphous polyolefin substance together;
- forming a latent image pattern in said chemically amplified resist by exposing said chemically amplified resist to ionizing radiation which transmits through said amorphous polyolefin substance;
- removing said amorphous polyolefin substance;
- subjecting the chemically amplified resist to heat treatment either after said latent image pattern is formed or after said amorphous polyolefin substance is removed;
- and
- making the latent image pattern visible by developing said chemically amplified resist.
5 more elements
A process for manufacturing a semiconductor device using a chemically amplified resist pattern comprising the steps of:
- applying a chemically amplified resist on a layer to be patterned;
- protecting the chemically amplified resist against reaction with ambient alkaline impurities by coating a surface thereof with a liquid amorphous polyolefin substance having hydrophobicity;
- heating said chemically amplified resist and said amorphous polyolefin substance together;
- forming a latent image pattern in said chemically amplified resist by exposing said chemically amplified resist to ionizing radiation which transmits through said amorphous polyolefin substance;
- forming a pattern of said chemically amplified resist by developing said chemically amplified resist after removing said amorphous polyolefin substance;
- and
- forming a pattern of the layer to be patterned using the chemically amplified resist pattern as a mask.
4 more elements
Dependencies are inferred from the claim text.