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US 5,705,845 AGranted
Semiconductor device with particular metal silicide film
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorToyokazu Fujii
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Abstract
In a metal silicide film, excessive silicon is contained and precipitated in silicide grain boundaries thereof. The thus precipitated excessive silicon makes a diffusion path of impurities, which extends along WSi.sub.2 grain interfaces, discontinuous in the metal silicide film. As a result, the impurities do not diffuse laterally in the metal silicide film even after a heat treatment is performed.
Claims13
A semiconductor device comprising:
- a first silicon region containing a p-type impurity;
- a second silicon region containing an n-type impurity;
- and
- a metal silicide film for electrically connecting the first silicon region and the second silicon region,
- wherein the metal silicide film contains excessive silicon, the excessive silicon being precipitated in silicide grain boundaries in the metal silicide fill, so that the metal silicide film includes more boundaries between metal silicide grains and silicon grains having a diffusion coefficient D.sub.MSi2/Si of impurities than boundaries between the metal silicide grains having a diffusion coefficient D.sub.MSi1/MSi2 of the impurities where D.sub.MSi2/Si <<D.sub.MSi2/MSi2, thereby making a diffusion path of the impurities along the silicide grain boundaries discontinuous.
2 more elements
Dependencies are inferred from the claim text.