Resonant tunneling bipolar transistor

A resonant tunneling bipolar transistor comprising:

• a semiconductor substrate;
• a p-type collector layer formed on said semiconductor substrate and an n-type base layer formed on said p-type collector layer;
• a laminated quantum well structure formed on a first part of said n-type base layer and an n-type contact layer formed on said laminated quantum well structure, wherein a quantum level of electrons is generated in said quantum well structure;
• a p-type emitter layer formed directly on a second part of said n-type base layer;
• and
• a collector electrode, a base electrode and an emitter electrode forming ohmic contact with said p-type collector layer, said n-type contact layer, and said p-type emitter layer, respectively.

A resonant tunneling bipolar transistor comprising:

• a semiconductor substrate;
• an n-type emitter layer formed on said semiconductor substrate and a p-type base layer formed on said n-type emitter layer;
• a laminated quantum well structure formed on a first part of said p-type base layer and a p-type contact layer formed on said laminated quantum well structure, wherein a quantum level of holes is generated in said quantum well structure;
• an n-type collector layer formed directly on a second part of said p-type base layer;
• and
• a collector electrode, a base electrode and an emitter electrode forming ohmic contact with said n-type collector layer, said p-type contact layer, and said n-type emitter layer, respectively.

A resonant tunneling bipolar transistor comprising:

• a semiconductor substrate;
• a p-type emitter layer formed on said semiconductor substrate and an n-type base layer formed on said p-type emitter layer;
• a laminated quantum well structure formed on a first part of said n-type base layer and an n-type contact layer formed on said laminated quantum well structure, wherein a quantum level of electrons is generated in said quantum well structure;
• a p-type collector layer formed directly on a second part of said n-type base layer;
• and
• a collector electrode, a base electrode and an emitter electrode forming ohmic contact with said p-type collector layer, said n-type contact layer, and said p-type emitter layer, respectively.

A resonant tunneling bipolar transistor comprising:

• a base layer on a collector layer on a semiconductor substrate;
• an emitter layer on said base layer;
• and
• a quantum well structure on said base layer for generating a quantum level of carriers, said quantum well structure being separated from said emitter layer so that an electrical current between said emitter layer and said collector layer does not flow through said quantum well structure.

A resonant tunneling bipolar transistor comprising:

• a base layer on an emitter layer on a semiconductor substrate;
• a collector layer on said base layer;
• and
• a quantum well structure on said base layer for generating a quantum level of carriers, said quantum well structure being separated from said collector layer so that an electrical current between said emitter layer and said collector layer does not flow through said quantum well structure .