Method of forming semiconductor device having planarized wiring with good thermal resistance

A method for manufacturing a semiconductor device comprising the steps of:

• (a) forming first and second contact holes having different sizes in an insulating film covering a surface of a semiconductor substrate, corresponding to first and second contact areas having different sizes defined in the surface of said semiconductor substrate, the second contact hole being larger than the first contact hole;
• (b) forming a conductive adhesion layer on the insulating film, the adhesion layer covering a bottom and side wall of each of said first and second contact holes;
• (c) forming a refractory metal layer on the adhesion layer, the refractory metal layer filling each of the first and second contact holes;
• (d) selectively removing the refractory metal layer to leave a fraction of the refractory metal layer in the first contact hole as a first metal layer and to leave another fraction of the refractory metal layer in the second contact hole as a second metal layer, the first metal layer filling the first contact hole, the second metal layer covering the side wall of the second contact hole, and exposing the adhesion layer at a central area of a bottom of the second contact hole;
• (e) forming a conductive barrier layer covering the adhesion layer on the insulating film, the first metal layer at an opening of the first contact hole, and the second metal layer and exposed adhesion layer in the second contact hole;
• (f) forming an Al or Al alloy layer to cover the barrier layer;
• and
• (g) patterning a laminate of the adhesion layer, barrier layer, and Al or Al alloy layer to form first and second wiring patterns, the first wiring pattern including a first left portion of the adhesion layer, the first metal layer, a first left portion of the barrier layer, and a left portion of the Al or Al alloy layer and being electrically connected to the first contact area via the first contact hole, and the second wiring pattern including a second left portion of the adhesion layer, the second metal layer, a second left portion of the barrier layer, and a second portion of the Al or Al alloy layer and being electrically connected to the second contact area via the second contact hole.

A method for manufacturing a semiconductor device on a substrate comprising the steps of:

• (a) forming an insulating layer on the substrate, the insulating layer having a first hole having a first diameter and a second hole having a second diameter larger than the first diameter;
• (b) forming a first barrier metal layer over the insulating layer so as to cover the first hole and the second hole;
• (c) forming a first conductive wiring layer over the first barrier metal layer;
• (d) removing the first conductive wiring layer so as to leave a first conductive plug in the first hole and a second conductive film over a side wall of the second hole to expose the first conductive wiring layer at an area of a bottom of the second hole;
• and
• (e) forming a second barrier metal layer over the first conductive plug, the second conductive film, and the first barrier metal layer, the second barrier metal layer contacting the first barrier metal layer at the bottom of the second hole.

A method for manufacturing a semiconductor device, comprising the steps of:

• (a) providing a substrate;
• (b) forming an insulating layer on the substrate, the insulating layer having a first hole having a first diameter and a second hole having a second diameter larger than the first diameter;
• (c) forming a first barrier metal layer over the insulating layer so as to cover the first hole and the second hole;
• (d) forming a first conductive plug in the first hole and a second conductive film having a sloping topography over a side wall of the second hole, the second conductive film partially expose the first barrier metal layer at a bottom of the second hole;
• (e) forming a second barrier metal layer over the first conductive plug, the second conductive film, and the first barrier metal layer, to sandwich the first conductive plug and the second conductive film by the first and second barrier metal layers, the second barrier metal layer partially contact the first barrier metal layer at the bottom of the second hole;
• and
• (f) forming a second conductive layer over the substrate.