US 5,705,081 A · Etching method

Abstract

An etching apparatus comprises a pair of electrodes provided to face each other in a processing vessel, a permanent magnet for forming a magnetic field substantially parallel to a surface of a to-be-processed object which is placed between the paired electrodes, a gas introduction section for introducing etching gas into the processing vessel, a high-frequency generator for applying high-frequency voltage to the paired electrodes for generating plasma, and a high-frequency control section for preventing plasma from being unevenly distributed by starting and stopping the application of high-frequency voltage by the high-frequency generator at fixed intervals.

Claims7

Dependent claims

An etching method, comprising the steps of:

forming a magnetic field parallel to a surface of a to-be-processed object, which is placed in a processing vessel, and introducing etching gas into the processing vessel;
and
applying high-frequency voltage for generating plasma between a pair of electrodes, which are provided to face each other in the processing vessel, and stopping application of the high-frequency voltage to the electrode at fixed intervals, to thereby decrease electrons in the plasma over the surface of the to-be-processed object, thereby uniformly plasma-etching the to-be-processed object.

Dependencies are inferred from the claim text.

Etching method

Life of this patent

Etching method

Life of this patent

Abstract

Claims7