Device and a method for epitaxially growing objects by CVD

A device for epitaxially growing objects of SiC, by Chemical Vapor Deposition on a substrate, said device comprising:

• a substantially cylindrical susceptor having continuous, closed circumferential walls with a substantially uniform thickness for defining a chamber receiving the substrate and a gas mixture, said susceptor walls being surrounded by thermal insulating means;
• means for heating said circumferential susceptor walls and thereby the substrate and said gas mixture fed to the substrate for the growth by feeding means to a temperature level in the range of 2000.degree.-2500.degree. C. at which sublimation of the grown material starts to considerably increase;
• said feeding means being adapted to feed said gas mixture into the susceptor with a composition and at a rate that ensures a positive growth.