Chemical vapor deposition apparatus with a heat radiation structure

Abstract

A chemical vapor deposition (CVD) apparatus having a heat radiation structure. The CVD apparatus has a process chamber wherein the semiconductor substrate is located, a gas inlet for introducing a process gas into the process chamber, a manifold for supporting the process chamber and the gas inlet, and a heat radiating member provided around the gas inlet, for radiating heat transmitted from the manifold. The gas inlet has a plurality of radiation plates formed around the gas inlet and a plurality of through-holes formed in each of the radiation plates. With the gas inlet having the heat radiating structure, heat from the manifold during the deposition process is not transmitted to the gas supply line and the like. Thus the associated parts are not corroded or deformed.

Dependencies are inferred from the claim text.