Shallow trench isolation using low dielectric constant insulator
AssigneeMicron Technology, Inc.
InventorsKlaus F. Schuegraf, Aftab Ahmad
Life of this patent
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Abstract
A shallow trench isolation is disclosed wherein the trench depth is reduced beyond that achieved in prior art processes. The reduced wench depth helps to eliminate the formation of voids during the trench refill process and provides for greater planarity in the final isolation structure. Effective device isolation is achieved with a reduced trench depth by utilizing refilling dielectric materials having low dielectric constant.
Claims22
A process for isolating devices on a semiconductor substrate comprising the steps of:
- removing predetermined portions of the semiconductor substrate forming recesses therein;
- and
- refilling the portions of the semiconductor substrate with a material comprising an in situ doped silicon oxide complex, the material having a dielectric constant lower than the dielectric constant of undoped silicon dioxide.
A process for isolating devices on a semiconductor substrate comprising the steps of:
- removing predetermined portions of the semiconductor substrate forming recesses therein;
- and
- refilling the portions of the semiconductor substrate with a material having a dielectric constant lower than the dielectric constant of silicon dioxide,
- wherein the material having a dielectric constant lower than that of silicon dioxide comprises a halide-doped silicon dioxide composition.
A method of reducing the formation of voids in a refilled trench isolation process comprising the steps of:
- forming trenches having an aspect ratio less than 2:1;
- refilling the trenches with an insulating material;
- and
- halide-doping the material.
A method of reducing the formation of voids in a refilled trench isolation process comprising the steps of:
- forming trenches having an aspect ratio less than 2:1;
- and
- refilling the trenches with a material having a dielectric constant less than the dielectric constant of silicon dioxide,
- wherein the refilling material comprises a Fluorine-doped silicon dioxide composition.
A process for isolating devices on a semiconductor substrate comprising the steps of:
- forming trenches within the substrate;
- lining the trenches with a diffusion barrier;
- refilling the trenches with silicon dioxide;
- and
- halide-doping silicon dioxide.
Dependencies are inferred from the claim text.