US 5,702,970 AGranted

Method for fabricating a capacitor of a semiconductor device

AssigneeHyundai Electronics Industries Co., Ltd.

InventorKyeong Keun Choi

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Abstract

A method for fabricating a capacitor of a semiconductor device which stabilizes the operation of electrodes of the capacitor and improves the operational characteristic and reliability of the semiconductor device. The method comprises the steps of: preparing a semiconductor substrate; forming an insulating layer on the substrate; forming a contact hole by selectively eliminating the lower insulating layer; forming a plug in the contact hole; forming a Ti/TiN film thereon; forming a first ruthenium oxide film on the Ti/TiN film; forming a first SOG film on the first ruthenium oxide film; implanting impurities into a surface of the first SOG film; forming a second SOG film on the first SOG film, and then selectively eliminating the first and the second SOG films; etching the first ruthenium oxide film and the Ti/TiN film by utilizing the first and second SOG films as a mask; eliminating the first and second SOG films, and then forming a dielectric film on the exposed surface thereof; and forming a second ruthenium oxide film on the dielectric film.

Claims9

Dependent claims

A method for fabricating a capacitor of a semiconductor device, the method comprising the steps of:

preparing a semiconductor substrate;
forming an insulating layer on said semiconductor substrate;
forming a contact hole, which exposes said semiconductor substrate, by selectively eliminating said lower insulating layer;
forming a plug in said contact hole;
forming a titanium/titanium nitride film on said plug and said lower insulating layer;
forming a first ruthenium oxide film on said titanium/titanium nitride film;
forming a first spin on glass film on said first ruthenium oxide film;
implanting a impurities into a surface of said first spin on glass film;
forming a second spin on glass film on said first spin on glass film, and then selectively eliminating said first and said second spin on glass films;
etching said first ruthenium oxide film and said titanium/titanium nitride film by utilizing said second and said first spin on glass films as a mask;
eliminating said second and said first spin on glass films, and then forming a dielectric film on an exposed surface of said first ruthenium oxide film, said titanium/titanium nitride film, and said lower insulating layer, the dielectric film having a specific dielectric constant;
and
forming a second ruthenium oxide film on said dielectric film.

10 more elements

Dependencies are inferred from the claim text.