Soft ashing method for removing fluorinated photoresists layers from semiconductor substrates

A method for removing from an integrated circuit layer formed upon a semiconductor substrate a partially fluorinated photoresist layer formed upon the integrated circuit layer comprising:

• forming over a semiconductor substrate an integrated circuit layer;
• forming upon the integrated circuit layer a partially fluorinated photoresist layer, the partially fluorinated photoresist layer having a fluorinated surface layer and an underlying non-fluorinated remainder layer;
• removing the fluorinated surface layer through a first etch method, the first etch method employing an oxygen containing plasma at a radio frequency power no greater than about 500 watts and a temperature no greater than about 120 degrees centigrade;
• and
• removing then the underlying non-fluorinated remainder layer through a second etch method.

A method for removing from a patterned silicon oxide insulator layer within an integrated circuit a patterned partially fluorinated photoresist layer employed in patterning the patterned silicon oxide insulator layer comprising:

• forming over a semiconductor substrate a silicon oxide insulator layer, the semiconductor substrate having integrated circuit devices formed therein and thereupon;
• forming upon the silicon oxide insulator layer a patterned photoresist layer;
• patterning through the patterned photoresist layer as an etch mask, and by use of a Reactive Ion Etch (RIE) plasma etch method employing a fluorine containing plasma etchant, the silicon oxide insulator layer to form a patterned silicon oxide insulator layer, the Reactive Ion Etch (RIE) plasma etch method simultaneously forming from the patterned photoresist layer a partially fluorinated patterned photoresist layer comprising a patterned fluorinated surface layer and a patterned non-fluorinated underlying remainder layer;
• removing the patterned fluorinated surface layer through a first etch method, the first etch method employing an oxygen containing plasma at a radio frequency power no greater than about 500 watts and a temperature no greater than about 120 degrees centigrade;
• and
• removing then the patterned non-fluorinated underlying remainder layer through a second etch method.