US 5,702,531 A · Apparatus for forming a thin film

Abstract

A plurality of wafers are placed on a boat, and the boat is inserted into a reactor. The reactor is heated by a heater, thereby heating the inserted wafers. Then, air is supplied between the reactor and the heater through the fan nozzles of a fan unit, thereby cooling the heater quickly at a rate of 17.degree. C./min. PH.sub.3 and SiH.sub.4 gases are introduced into the reactor through first and second gas nozzles, only while the average temperature of a peripheral portion of each wafer remains 30.degree. C. lower than that of a central portion of the same. Thereafter, when the temperature difference between the peripheral and central portions has become lower than 30.degree. C., the supply of PH.sub.3 and SiH.sub.4 gases is stopped. Thus, a polycrystal silicon film is formed on each wafer.

Claims6

Dependent claims

An apparatus for forming a thin film, comprising:

a reactor for containing a tube inside of which a boat is placed;
a plurality of semiconductor substrates contained in the boat, said semiconductor substrates being arranged parallel to one another at regular intervals;
gas introducing means for introducing gases into the reactor;
heating means provided outside the reactor for heating the reactor;
cooling means for cooling the reactor;
and
control means for controlling the gas introducing means, the cooling means, and the heating means;
wherein the gases are introduced into a space between the tube and the boat, and the cooling means has a nozzle tip beneath a space between the heating means and the reactor to provide fan cooling air flow between the heating means and the reactor from bottom to top.

5 more elements

Dependencies are inferred from the claim text.

Apparatus for forming a thin film

Life of this patent

Apparatus for forming a thin film

Life of this patent

Abstract

Claims6