Photomask and a manufacturing method thereof

A manufacturing method, which is used for a photomask for forming a pattern on an exposure-receiving surface of a wafer comprising:

• a transparent substrate through which exposure light is transmissible;
• a semitransparent film that has
• a transmitting section that allows the exposure light to pass without changing the phase of the exposure light, and
• an inversion transmitting section that is adjacent to the transmitting section for inverting the phase of the exposure light,
• the semitransparent film being arranged to form a pattern on the transparent substrate by using the inversion transmitting section and the transmitting section;
• and
• the method comprising the steps of:
• a light-shielding film that is formed on a portion of the semitransparent film that corresponds to a portion of the exposure-receiving surface to which a 1st order diffracted light ray of the transmitted light that has passed through the transmitting section is directed,
• the method comprising the steps of:
• successively forming a semitransparent film, a light-shielding film, and a resist film on a transparent substrate;
• patterning the resist film so as to provide a pattern of the semitransparent film in a first area after forming the resist film so as to become thinner at the first area than at a second area, as well as removing the light-shielding film and the semitransparent film by using the pattern of the resist film as a mask, and
• removing only the resist film in the first area completely by utilizing the difference of thicknesses of the resist film in the first area and the second area as well as for removing the light-shielding film by using the resist film in the second area as a mask.

A semiconductor device comprising:

• a semiconductor substrate having an exposure-receiving surface;
• and
• a pattern that is formed on the semiconductor substrate by using a photomask, the photomask being provided with:
• a semitransparent film that has a transmitting section that allows the exposure light to pass without changing the phase of the exposure light, and an inversion transmitting section that is adjacent to the transmitting section for inverting the phase of the exposure light, the semitransparent film being arranged to form a pattern on the transparent substrate by using the inversion transmitting section and the transmitting section;
• and
• a light-shielding film that is formed on a portion of the semitransparent film that corresponds to a portion of the exposure-receiving surface to which a 1st order diffracted light ray of the transmitted light that has passed through the transmitting section is directed.

A manufacturing method for a semiconductor device comprising the steps of:

• applying an exposure onto an exposure-receiving surface of a semiconductor substrate through a photomask, the photomask being provided with:
• a transparent substrate through which exposure light transmits;
• a semitransparent film that has
• a transmitting section that allows the exposure light to pass without changing the phase of the exposure light, and
• an inversion transmitting section that is adjacent to the transmitting section for inverting the phase of the exposure light,
• the semitransparent film being arranged to form a pattern on the transparent substrate by using the inversion transmitting section and the transmitting section;
• and the method comprising the steps of:
• a light-shielding film that is formed on a portion of the semitransparent film that corresponds to a portion of the exposure-receiving surface to which a 1st order diffracted light ray of the transmitted light that has passed through the transmitting section is directed, and
• forming a pattern onto the semiconductor substrate.