Low temperature, high pressure silicon deposition method
AssigneeApplied Materials, Inc.
InventorsIsrael Beinglass, David K. Carlson
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Abstract
A method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute.
Claims8
A thermal chemical vapor deposition method of depositing a layer comprising doped or undoped amorphous silicon and mixtures thereof with polycrystalline silicon comprising:
- a) loading a substrate into a chemical vapor deposition vacuum chamber;
- b) controlling the temperature of the substrate to between about 600.degree. and about 690.degree. C.;
- and
- c) adding a silane selected from the group consisting of monosilane, disilane, monosilane mixed with a dopant gas and disilane mixed with a dopant gas, to the chamber and maintaining the pressure of the chamber between about 10 and 350 Torr until the silicon layer is deposited on the substrate.
Dependencies are inferred from the claim text.