Dielectric material and process to create same
AssigneeMicron Technology, Inc.
InventorsRandhir P.S. Thakur, Gurtej S. Sandhu
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Abstract
An embodiment of the present invention describes a method for forming a dielectric material for a storage capacitor during fabrication of a semiconductor memory device, by: cleaning impurities from the surface of a conductive plate of the storage capacitor; forming a nitride film over the conductive plate's cleaned surface; forming a metal silicide film over the nitride film; and oxidizing the metal silicide film by rapid thermal oxide (RTO) processing. A resulting structure is a capacitor having a dielectric material that is an oxidized metal silicide film.
Claims15
A method for forming an oxidized compound over a silicon surface during fabrication of a semiconductor device, said method comprising the steps of:
- cleaning the silicon surface to provide a clean silicon surface;
- forming a dielectric film over said clean silicon surface;
- forming a TiSi.sub.x film over said dielectric film;
- and
- oxidizing said TiSi.sub.x film by rapid thermal oxide (RTO) processing, thereby transforming said TiSi.sub.x film into said oxidized compound having the form TiO.sub.x Si.sub.y O.sub.z.
Dependencies are inferred from the claim text.