Method of forming a capacitor over a semiconductor substrate

A method of forming a semiconductor device integrated with a storage capacitor and a MOS field effect transistor over a semiconductor substrate, said method comprising the steps of:

• selectively forming a field oxide film on a passive region of a semiconductor substrate to define an active region;
• forming a first insulation film over said semiconductor substrate and over said field oxide film;
• forming a first conductive film over said first insulation film;
• forming a capacitive insulation film over said first conductive film;
• forming a second conductive film over said capacitive insulation film;
• forming a second insulation film over said second conductive film;
• providing a first photo-resist material over said second insulation film;
• subjecting said first photo-resist material to a first exposure and a first development to define a first photo-resist pattern selectively positioned in said passive region;
• subjecting said capacitive insulation film, said second conductive film and said second insulation film to a first anisotropic dry etching which uses said first photo-resist pattern as a mask to selectively form a top electrode and a capacitive dielectric film in said passive region;
• removing said first photo-resist pattern;
• providing a second photo-resist material on said first conductive film and said second insulation film remaining;
• subjecting said second photo-resist material to a second exposure and a second development to selectively define second photo-resist patterns in said active and passive regions;
• and
• subjecting said first conductive film to a second anisotropic dry etching which uses said second photo-resist patterns as masks to define a bottom electrode in said passive region and a gate electrode in said active region.