US 5,670,404 AGranted

Method for making self-aligned bit line contacts on a DRAM circuit having a planarized insulating layer

AssigneeIndustrial Technology Research Institute

InventorChang-Ming Dai

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Abstract

An improved method for fabricating self-aligned contacts in a planar insulating layer to the source/drain contact areas on field effect transistors (FETs), formed in part from a first polycide layer, is achieved using an undoped polysilicon layer as an etch-stop layer. The planar insulating layer provides a good surface for patterning a second polycide layer without intralevel shorts that would otherwise occur over a rough topography. This is of particular use for forming the array of bit lines over the array of word lines for DRAM circuits. The method involves providing a patterned undoped polysilicon layer on the gate electrodes. A planarized insulating layer, such as reflowed borophosphosilicate glass (BPSG) is then deposited and reflowed to fill the high aspect ratio recesses between the closely spaced word lines. The bit line contact openings are anisotropically plasma etched in the BPSG to the FET source/drain contact areas, while using the undoped polysilicon layer over the gate electrodes as an etch-stop layer to form self-aligned contacts without etching into the gate electrodes.

Claims23

Dependent claims

A method for fabricating self-aligned bit line contacts on a dynamic random access memory device comprising the steps of:

providing a semiconductor substrate having device areas surrounded by field oxide areas;
forming a gate oxide on said device areas;
depositing a first polycide layer on said gate oxide and elsewhere on said field oxide areas;
depositing a first insulating layer over said first polycide layer;
depositing an etch-stop layer on said first insulating layer;
patterning said etch-stop layer, said first insulating layer, and said first polycide layer thereby forming an array of word lines, said word lines extending over said gate oxide forming field effect transistor gate electrodes;
removing portions of said etch-stop layer while leaving portions over said word lines adjacent to areas where bit line contact openings are desired;
forming lightly doped source/drain areas by ion implantation;
depositing a conformal second insulating layer and anisotropically plasma etching back said second insulating layer thereby forming sidewall spacers on said array of word lines;
depositing a conformal third insulating layer over said array of word lines;
depositing a fourth insulating layer over said third insulating layer;
planarizing said fourth insulating layer and filling recesses between said word lines;
coating a photoresist layer on said planar fourth insulating layer and providing openings over said desired bit line contact openings and further extending over said etch-stop layer on said word lines;
etching said bit line contact openings in said fourth and third insulating layers to said etch-stop layer, and continuing said etching of said fourth and third insulating layers between portions of said etch-stop layer to the surface of said device areas, thereby forming said self-aligned bit line contact openings;
depositing a conformal second polycide layer in said bit line contact openings and elsewhere over said planar fourth insulating layer;
patterning said second polycide and forming an array of polycide bit lines essentially orthogonal to said word lines, thereby completing said self-aligned bit line contacts and said bit lines.

13 more elements

A method for fabricating self-aligned bit line contacts on a dynamic random access memory device comprising the steps of:

providing a semiconductor substrate having device areas surrounded by field oxide areas;
forming a gate oxide on said device areas;
depositing a first polycide layer on said gate oxide and elsewhere on said field oxide areas;
depositing a first insulating layer over said first polycide layer;
depositing an etch-stop layer on said first insulating layer, wherein said etch-stop layer is an undoped polysilicon layer;
patterning said etch-stop layer, said first insulating layer, and said first polycide layer thereby forming an array of word lines, said word lines extending over said gate oxide forming field effect transistor gate electrodes;
removing portions of said etch-stop layer while leaving portions over said word lines adjacent to areas where bit line contact openings are desired;
forming lightly doped source/drain areas by ion implantation;
depositing a conformal second insulating layer and anisotropically plasma etching back said second insulating layer thereby forming sidewall spacers on said array of word lines;
depositing a conformal third insulating layer over said array of word lines;
depositing a fourth insulating layer over said third insulating layer;
planarizing said fourth insulating layer and filling recesses between said word lines;
coating a photoresist layer on said planar fourth insulating layer and providing openings over said desired bit line contact openings and further extending over said etch-stop layer on said word lines;
etching said bit line contact openings in said fourth and third insulating layers to said etch-stop layer, and continuing said etching of said fourth and third insulating layers between portions of said etch-stop layer to the surface of said device areas, thereby forming said self-aligned bit line contact openings;
depositing a conformal second polycide layer in said bit line contact openings and elsewhere over said planar fourth insulating layer;
patterning said second polycide layer and forming an array of polycide bit lines essentially orthogonal to said word lines, thereby completing said self-aligned bit line contacts and said bit lines.

13 more elements

Dependencies are inferred from the claim text.