Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
AssigneeStarfire Electronic Development & Marketing, Ltd.
InventorAvery N. Goldstein
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Abstract
A high resolution exposure mask suitable for x-ray lithography is described in the present invention and a method of manufacturing the same. Nanocrystals of electron dense materials, preferably as a colloidal solution are applied to a surface of a low electron density substrate, so as to form features as fine as about 10 nanometers. The reduced melting and sintering temperatures associated with nanocrystals, compared with the bulk material allows for the use of more moderate processing conditions. Lessened interfacial stress between dissimilar layers results.
Claims32
An exposure mask, comprising:
- a substrate;
- and
- a polycrystalline layer resulting from the build-up and fusion of nanocrystalline precursors having domains of less than 60 nanometers, said layer being supported and patterned directly on said substrate, said layer having substantially zero internal stress.
The method of fabricating an exposure mask using nanocrystal precursors comprising the steps of:
- (a) providing a substrate having a supporting surface;
- (b) depositing a layer of irradiation sensitive resin onto the surface of said substrate;
- (c) selectively decomposing a pattern into said resin so as to expose selected regions of the surface of said substrate;
- (d) depositing nanocrystals onto said resin and the exposed regions of said substrate;
- (e) dissolving the resin from the surface of said substrate;
- and
- (f) sintering the nanocrystals at a temperature below the bulk sintering temperature, so as to yield patterned features derived from nanocrystals attached directly to the surface of said substrate.
An exposure mask, comprising:
- a substrate;
- and
- a polycrystalline layer derived from the build-up and fusion of a nanocrystal precursor of a given size, said layer having a domain size relating to the size of the nanocrystal precursor, said layer being supported and patterned on said substrate, said layer having substantially zero internal stress.
Dependencies are inferred from the claim text.