US 5,631,181 A · Method of making a monolithic diode array

Abstract

A semiconductor component is formed in a semiconductor wafer, of a first conductivity type. The semiconductor component includes a plurality of first regions, of a second conductivity type, in a top surface of the wafer and coated with a first metallization layer. The semiconductor component further includes a second region, of the second conductivity type, and a third region, of the first conductivity type, each formed in the top surface of the wafer. A second metallization layer coats the second and third regions. A fourth region, of the first conductivity type, is formed in a bottom surface of the semiconductor wafer and opposes the first and second regions. A fifth region, of the second conductivity type, is also formed in the bottom surface and opposes the third region. A rear surface metallization covers the bottom surface of the semiconductor wafer.

Claims18

Dependent claims

A method for forming and mounting a semiconductor component in a casing, comprising the steps of:

vertically forming a plurality of protection diodes in a semiconductor wafer of a first conductivity type, each of the plurality of protection diodes having a first region of a second conductivity type formed at a top surface of the semiconductor wafer and covered by a first metallization and a second region of the first conductivity type formed at a bottom surface of the semiconductor wafer and connected to a second metallization;
forming a third metallization at the top surface of the semiconductor wafer that is electrically coupled to the second metallization of each of the plurality of protection diodes;
connecting, by means of a respective bond wire, the first metallization of said each of the plurality of protection diodes and the third metallization to a respective one of a plurality of bonding strips;
and
connecting each bonding strip to one pin of a plurality of pins of the casing.

2 more elements

A method for forming and mounting a semiconductor component in a casing, comprising the steps of:

vertically forming a plurality of protection diodes in a semiconductor wafer of a first conductivity type, each of the plurality of protection diodes having a first region of a second conductivity type formed at a top surface of the semiconductor wafer and connected to a first metallization, and a fourth region of the first conductivity type formed at a bottom surface of the semiconductor wafer and connected to a second metallization;
forming a third metallization at the top surface of the semiconductor wafer that is electrically coupled to the second metallization of each of the plurality of protection diodes;
forming a second region of the second conductivity type at the top surface of the semiconductor wafer;
forming a third region of the first conductivity type at the top surface of the semiconductor wafer;
forming the fourth region of the first conductivity type at the bottom surface of the semiconductor wafer so as to substantially face the first and second regions;
forming a fifth region of the second conductivity type at the bottom surface of the semiconductor wafer, substantially facing the third region;
coating the second and third regions with the third metallization;
connecting by means of a respective bond wire the first metallization of each of the plurality of protection diodes and the third metallization to a respective one of a plurality of bonding strips;
and
connecting each bonding strip to one pin of a plurality of pins of the casing.

7 more elements

Dependencies are inferred from the claim text.

Method of making a monolithic diode array

Life of this patent

Method of making a monolithic diode array

Life of this patent

Abstract

Claims18