Back to results
US 5,627,400 AGranted
Semiconductor memory device
AssigneeNEC Corporation
InventorHiroki Koga
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeNEC Corporation
InventorHiroki Koga
Estimating the term…
A semiconductor memory device including (a) a plug buried in a contact hole formed through an upper insulative layer and/or a contact hole formed through upper and lower insulative layers, the plug comprising a metal having a high melting point, (b) a fuse formed in a channel formed through the upper insulative layer, the fuse comprising the same material as that of the plug, and (c) an interconnection layer formed on the upper insulative layer and connected to the plug and opposite ends of the fuse. In the semiconductor memory device, a metal layer, comprising a metal having a high melting point and formed simultaneously with the plug to fill a contact hole therewith, works as a fuse. Thus, it is possible to obtain a low-resistive fuse without increasing the number of fabrication steps relative to the prior art, resulting in higher speed operation of a memory device without cost increase.
A semiconductor memory device wherein a defective bit cell can be substituted with a redundant bit cell by breaking a fuse, said semiconductor memory device comprising:
A semiconductor memory device wherein a defective bit cell can be substituted with a redundant bit cell by breaking a fuse, said semiconductor memory device comprising:
Dependencies are inferred from the claim text.