Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a substrate wherein an integrated circuit is formed;
• a first insulating layer formed on said substrate;
• a capacitor comprising a lower electrode formed on said first insulating layer, a dielectric film having a high dielectric constant formed on said lower electrode, and an upper electrode formed on said dielectric film;
• a second insulating layer covering said capacitor and having contact holes leading to said lower electrode and upper electrode respectively;
• a first diffusion barrier layer covering at least inside walls of said contact holes, and touching said lower electrode and upper electrode at each bottom of said contact holes;
• a second diffusion barrier layer formed on said first diffusion barrier layer;
• and
• an interconnection layer formed on said second diffusion barrier layer,
• wherein said first and second diffusion barrier layers are composed of a same material and have different crystal grain structures at each bottom of said contact holes.