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US 5,508,208 AGranted
Method of manufacturing diamond semiconductor
AssigneeSony Corporation
InventorJunichi Sato
Life of this patent
Estimating the term…
Abstract
In a method of manufacturing diamond semiconductor mainly composed of carbon, a technique is provided which is free from the possibility of destruction of diamond structure, permits n-type doping into diamond and further permits high concentration n-type doping. In this method of diamond semiconductor manufacture, lithium atoms (which may be produced from a nitrogen compound of lithium, for instance lithium azide) is doped using ECR plasma into diamond 102 with the surface thereof having been cleaned, if necessary.
Claims10
A method of making an n-doped diffusion layer in a diamond semiconductor device comprising the steps of:
- providing a substrate including a diamond semiconductor film thereon and an etched insulating film on said diamond semiconductor film defining exposed portions;
- and
- doping the exposed portions with lithium to form a diffusion layer by placing the substrate in a reaction chamber and exposing the substrate to a high density ECR plasma having a plasma density of 1.times.10.sup.12 cm.sup.-3 or more formed from a gas of nitrogen compound of lithium.
Dependencies are inferred from the claim text.