Method of removing photo resist
AssigneeMotorola, Inc.
InventorsPhil Wootton, Graeme Morland, Karl E. Mautz, John Dalziel
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Abstract
A method of removing photoresist (20) from a metal layer (16) formed on a substrate (1) and having a pattern defined by means of a corrosive gas plasma etch. The method consists of etching the resist (20) in an oxygen gas plasma for a period of time and at a sufficiently high temperature to remove all residual corrosive gas absorbed in the photoresist and below the temperature at which the metal beings to flow. An etching time of 3 minutes at 300.degree. C. is typically used.
Claims8
A method of removing photoresist from a metal layer formed on a substrate and having a pattern defined thereon by means of a corrosive gas plasma, the method including the steps of plasma etching the resist in an oxygen gas plasma for a period of time and at a sufficiently high temperature to remove substantially all residual corrosive gas absorbed in the photoresist and below the temperature at which the metal begins to reflow.
Dependencies are inferred from the claim text.