US 5,491,100 AGranted

Method for manufacturing a semiconductor device having a contact window structure

AssigneeSamsung Electronics Co., Ltd.

InventorsYong H. Lee, Young W. Seo

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Abstract

A method of manufacturing and a structure of a semiconductor device is disclosed whereby a gate insulating layer, a polycrystalline silicon layer, a tungsten silicide layer and a first insulating layer are formed on a semiconductor substrate. Gates are formed by the removal of the layers by dry etching, wherein the etch rate of the tungsten silicide layer is faster than the other layers, thereby forming an undercut region in the tungsten silicide layer. A second insulating layer is formed on the surface of the resultant structure to form spacers, and a contact window is formed between the gates via an etching process. The second insulating layer portion which forms the spacers need not be thick to prevent etching of the gates when forming the contact window, therefore good step coverage is achieved and reliability of the device is increased.

Claims10

Dependent claims

A method for manufacturing a gate structure of a semiconductor device comprising the steps of:

forming a gate insulating layer on a semiconductor substrate;
forming a first conductive layer of polycrystalline silicon on said gate insulating layer;
forming a second conductive layer of refractory metal silicide on said first conductive layer;
forming a first insulating layer on said second conductive layer;
forming a first photoresist pattern on said first insulating layer;
forming a gate structure in said first insulating layer, said second conductive layer, and said first conductor layer by removing an exposed portion of said first insulating layer, said second conductive layer, and said first conductive layer using said first photoresist pattern as a mask, said second conductive layer of said gate structure having a recessed edge portion with respect to an edge portion of said first insulating layer and an edge portion of said first conductive layer.

3 more elements

Dependencies are inferred from the claim text.