Contact structure with capacitor for group III-V semiconductor devices
AssigneeFujitsu Limited
InventorKouichi Yuuki
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Abstract
A lower electrode, a first inorganic insulating film of SiN, and an organic insulating film of polyimide are formed on a GaAs substrate serving as an underlie, in this order. The organic insulating film is selectively etched to form a capacitor opening. A second norganic insulating film covering the surface of the organic insulating film and the bottom and side wall of the capacitor opening, and an upper electrode are formed. As the selective etching of the organic insulating film, wet etching may be used for simplifying manufacturing processes. Alternatively, dry etching may be used for improving etching accuracy. The organic insulating film 4 may be formed by a multi-layer film so that a circuit can be formed across multi-layers, improving the degree of integration.
Claims9
A group III-V compound semiconductor device comprising:
- a group III-V compound semiconductor substrate;
- a lower electrode formed on said substrate;
- a first dielectric insulating film covering said lower electrode;
- an interlayer insulating film comprising, at least partially, an organic insulating material and formed on said first dielectric insulating film, said interlayer insulating film having an opening therein disposed above said lower electrode, a surface portion of said first dielectric insulating film being exposed through said opening;
- a second dielectric insulating film formed on said interlayer insulating film and laminated on the surface portion of said first dielectric insulating film exposed through said opening;
- and
- an upper electrode formed on said second dielectric insulating film in said opening.
A group III-V compound semiconductor device comprising:
- a group III-V compound semiconductor substrate;
- a lower electrode formed on said substrate;
- a first dielectric insulating film covering said lower electrode and the substrate;
- an interlayer insulating film comprising, at least partially, an organic insulating material and formed on said first dielectric insulating film, said interlayer insulating film having an opening therein disposed above a region of said lower electrode, a surface portion of said first dielectric insulating film being exposed through the opening;
- a second dielectric insulating film formed on said interlayer insulating film and stacked on said surface portion of said first dielectric insulating film exposed through said opening;
- and
- an upper electrode formed on said second dielectric insulating film in said opening.
Dependencies are inferred from the claim text.