Dielectric thin film and method of manufacturing same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMunehiro Shibuya, Masatoshi Kitagawa, Takeshi Kamada, Takashi Hirao
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Abstract
A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O.sub.2, N.sub.2 O, and a mixture of O.sub.2 and N.sub.2 O by plasma-decomposing the raw materials with the application of a strong electric field.
Claims5
A single dielectric film comprising oxides of titanium and silicon, said film having a high dielectric constant and a low leakage current resulting from a single step deposition by exposing a substrate to a plasma generated by simultaneously flowing titanium chloride, nitrogen, nitrous oxide and a monosilane into a vacuum chamber containing the substrate and means for creating said plasma.
A dielectric film comprising oxides of silicon and titanium said film deposited in a single step on a substrate by plasma chemical vapor deposition using titanium chloride and monosilane as reactants and nitrogen and nitrous oxide as carrier gases.
A dielectric film deposited in a single step used as an insulating film of a capacitor in a semiconductor dynamic random access memory, said dielectric film comprises oxides of titanium and silicon with a dielectric constant about 20 and a leakage current about 10.sup.-9 A/cm.sup.2.
Dependencies are inferred from the claim text.