Chemical vapor deposition process employing metal pentadienyl complexes
AssigneeSyracuse University
InventorsJames T. Spencer, Richard D. Ernst
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Abstract
Vapor deposition of metal films is carried out using as precursors metal compounds or complexes based on open pentadienyls and derivatives. The technique can be used favorably for transition metal depositions, and can be carried out photolytically or thermolytically. In certain cases, oxygen can be substituted for a terminal carbon atom.
Claims13
Chemical vapor deposition process for depositing a metal film upon a substrate comprising contacting said substrate with a vapor of a precursor of the general formula ##STR4## where M is a nonferrous metallic element;
- Ln is one or more additional ligands;
- R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are substituents selected from the group consisting of hydrogen, lower alkyl, halogenated lower alkyl, alkylated silyl and siloxy;
- and
- thermally or photolytically decomposing said precursor in contact with the substrate with sufficient energy to bring about deposition of a film of the metallic element.
Chemical vapor deposition process for depositing a metal film upon a substrate, comprising
- contacting said substrate with a vapor of a precursor of the general formula ##STR5## where M is a metallic element;
- Ln is one or more additional ligands;
- and
- R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are selected from the group that consists of hydrogen, lower alkyls, halogenated lower alkyls, silyls and alkylated silyl;
- and
- thermally or photolytically decomposing said precursor at predetermined locations where said precursor contacts the substrate to bring about deposition of the metallic element.
Dependencies are inferred from the claim text.