Method of fabricating high temperature refractory metal nitride contact and interconnect structure

Abstract

An interconnect for an integrated circuit in a semiconductor substrate formed on an insulation layer on a surface of the substrate includes a first layer of a refractory metal nitride on said insulation layer, a layer of refractory metal on said first layer of refractory metal nitride, and a second layer of refractory metal nitride on said Layer of refractory metal, said first layer of refractory metal layer nitride, said layer of refractory metal, and said second layer of refractory metal nitride forming said interconnect structure. The interconnect structure makes contact with the integrated circuit through openings in the insulation layer. Boron ions are implanted into the substrate through the interconnect structure in the openings to facilitate ohmic contact between the substrate and the interconnect structure.

Dependencies are inferred from the claim text.