Single crystal ferroelectric barium titanate films
AssigneesKanegafuchi Chemical Industry Co., Ltd., Nippon Steel Corporation, NEC Corporation, Seisan Kaihatsu Kagaku Kenkyusho
InventorsToshio Takada, Takahito Terashima, Kenji Iijima, Kazunuki Yamamoto, Kazuto Hirata, Yoshichika Bando
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Abstract
A ferroelectric thin film consisting of a single crystal of BaTiO.sub.3 which has a perovskite structure is produced by a method comprising evaporating Ba and Ti in an atomic ratio of 1:1 from discrete evaporation sources of Ba and Ti to deposit them on a substrate in a vacuum deposition vessel while supplying a small amount of an oxygen gas to the reactor.
Claims9
A method for producing a substantially single crystal ferroelectric thin film having a thickness of not larger than 1 .mu.m, which method comprises evaporating Ba and Ti in an atomic ratio of 1:1 from discrete evaporation sources of Ba and Ti to deposit the evaporated Ba and Ti on a substrate in a vacuum deposition vessel while supplying oxygen gas in an amount sufficient to maintain oxygen pressure within the vessel between 10.sup.-5 and 10.sup.-3 Torr.
Dependencies are inferred from the claim text.