Semiconductor device having thyristor structure

A semiconductor device, comprising:

• a second conductive type base region;
• a first conductive type drain region formed in a surface of said second conductive type base region;
• a drain electrode connected to said first conductive type drain region;
• a first conductive type first base region formed in said surface of said second conductive type base region and at a position separated from said first conductive type drain region;
• a first conductive type second base region formed in said surface of said second conductive type base region and at a position separated from said first conductive type drain region and said first base region;
• a first MIS portion capable of connecting a second conductive type first source region formed in said first base region to said second conductive type base region;
• and
• a second MIS portion including a second conductive type second source region formed in said second base region and a second conductive type drain region formed in said second base region;
• wherein said first source region and said second source region are electrically connected, and said first base region and said second conductive type drain region are electrically connected;
• and
• wherein said drain electrode is electrically connected to a side of said second conductive type base region as well as said first conductive type drain region.

A semiconductor device, comprising:

• a second conductive type base region;
• a first conductive type drain region to which a drain electric potential is applied;
• a thyristor portion including, at a position over said second conductive type base region and facing said first conductive type drain region, a first conductive type base region, a source region formed in said first conductive type base region and to which a source electric potential is applied, and a first gate electrode disposed over said source region, said first conductive type base region and said second conductive type base region;
• and
• a control MISFET including a second gate electrode capable of controlling a connection of said first conductive type base region with said source region.

A semiconductor device, comprising:

• a second conductive type base region;
• a first conductive type drain region to which a drain electric potential is applied;
• a thyristor portion including, at a position over said second conductive type base region and facing said first conductive type drain region, a first conductive type base region, a source region formed in a said first conductive type base region and to which a source electric potential, and a first gate electrode disposed over said source region, said first conductive type base region and said second conductive type base region;
• and
• a control MISFET portion including a first conductive type MIS base region formed on said second conductive type base region separately from said first conductive type base region, and a control MISFET provided with a second gate electrode formed above said first conductive type MIS base region;
• wherein said control MISFET includes a second conductive type MIS source layer to which said source electric potential is applied, said source electric potential also applied to said MIS base region, and a second conductive type MIS drain layer connected to said first conductive type base region.

A semiconductor device, comprising:

• a first conductive type base region;
• a second conductive type drain region to which a drain electric potential is applied through a drain electrode;
• a thyristor portion including a second conductive type base region formed at a position separated from said second conductive type drain region, a source region formed in said second conductive type base region and to which a source electric potential is applied and a first gate electrode disposed over said source region, said second conductive type base region and said first conductive type base region;
• a first control switching portion capable of controlling a connection between said source region and said second conductive type base region;
• and
• a second control switching portion capable of controlling a connection between said first conductive type base region and said drain electrode;
• a second conductive type drain region, a thyristor portion, a first control switching portion and a second control switching portion being formed at a surface side of said first conductive type base region.