GaP light emitting element substrate with oxygen doped buffer
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsMunehisa Yanagisawa, Susumu Higuchi, Yuuki Tamura
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Abstract
To obtain a GaP light emitting element substrate which provides GaP light emitting diodes with less luminance dispersion and high brightness. A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is kept at 6.times.10.sup.15 [atoms/cc] or less.
Claims1
A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is 6.times.10.sup.15 [atoms/cc] or less.
Dependencies are inferred from the claim text.