Thin-film transistor array with anodic oxide for use in a liquid crystal display

A thin-film transistor array suited for use in a liquid crystal display, said thin-film transistor array comprising:

• a substrate;
• a first electrically conductive layer made principally of aluminum and selectively formed on one surface of said substrate, said first electrically conductive layer containing, as an impurity, a high-melting point metal which can be anodized, said first electrically conductive layer has a gradient in concentration of said high-melting point metal, which gradually changes in a direction perpendicular thereto;
• an oxide layer formed by an anodization process on said first electrically conductive layer;
• a first insulating layer formed on said oxide layer so as to overlay said substrate;
• a first non-monocrystalline semiconductor layer made principally of silicon and selectively formed on said insulating layer, a portion of said first non-monocrystalline semiconductor layer being positioned above said first electrically conductive layer;
• a pair of second non-monocrystalline semiconductor layers made principally of silicon containing phosphorus, said second non-monocrystalline semiconductor layers being formed on said first non-monocrystalline semiconductor layer;
• and
• a pair of second electrically conductive layers formed on said pair of second non-monocrystalline semiconductor layers, respectively, at least a portion of each of said second electrically conductive layers being positioned above said first non-monocrystalline semiconductor layer.

A thin-film transistor array suited for use in a liquid crystal display, said thin-film transistor array comprising:

• a substrate;
• a first electrically conductive layer made principally of aluminum and selectively formed on one surface of said substrate;
• an oxide layer formed by an anodization process on said first electrically conductive layer, said oxide layer containing, as an impurity, a high-melting point metal which can be anodized;
• a first insulating layer formed on said oxide layer so as to overlay said substrate;
• a first non-monocrystalline semiconductor layer made principally of silicon and selectively formed on said insulating layer, a portion of said first non-monocrystalline semiconductor layer being positioned above said first electrically conductive layer;
• a pair of second non-monocrystalline semiconductor layers made principally of silicon containing phosphorus, said second non-monocrystalline semiconductor layers being formed on said first non-monocrystalline semiconductor layer;
• and
• a pair of second electrically conductive layers formed on said pair of second non-monocrystalline semiconductor layers, respectively, at least a portion of each of said second electrically conductive layers being positioned above said first non-monocrystalline semiconductor layer.

A thin-film transistor array suited for use in a liquid crystal display, said thin-film transistor array comprising:

• a substrate;
• a first electrically conductive layer having a double-layered structure including a first layer selectively formed on one surface of said substrate and a second layer formed on said first layer, said first layer being made of aluminum containing at least one of silicon and copper, said second layer being made of aluminum containing, as an impurity, a high-melting point metal which can be anodized;
• an oxide layer formed by an anodization process on said first electrically conductive layer;
• a first insulating layer formed on said oxide layer so as to overlay said substrate;
• a first non-monocrystalline semiconductor layer made principally of silicon and selectively formed on said insulating layer, a portion of said first non-monocrystalline semiconductor layer being positioned above said first electrically conductive layer;
• a pair of second non-monocrystalline semiconductor layers made principally of silicon containing phosphorus, said second non-monocrystalline semiconductor layers being formed on said first non-monocrystalline semiconductor layer;
• and
• a pair of second electrically conductive layers formed on said pair of second non-monocrystalline semiconductor layers, respectively, at least a portion of each of said second electrically conductive layers being positioned above said first non-monocrystalline semiconductor layer.

A thin-film transistor array suited for use in a liquid crystal display, said thin-film transistor array comprising:

• a substrate;
• a first electrically conductive layer having a double-layered structure including a first layer selectively formed on one surface of said substrate and a second layer formed on said first layer, said first layer being made of pure aluminum, said second layer being made of aluminum containing a high-melting point metal as an impurity;
• an oxide layer formed by an anodization process on said first electrically conductive layer;
• a first insulating layer formed on said oxide layer so as to overlay said substrate;
• a first non-monocrystalline semiconductor layer made principally of silicon and selectively formed on said insulating layer, a portion of said first non-monocrystalline semiconductor layer being positioned above said first electrically conductive layer;
• a pair of second non-monocrystalline semiconductor layers made principally of silicon containing phosphorus, said second non-monocrystalline semiconductor layers being formed on said first non-monocrystalline semiconductor layer;
• and
• a pair of second electrically conductive layers formed on said pair of second non-monocrystalline semiconductor layers, respectively, at least a portion of each of said second electrically conductive layers being positioned above said first non-monocrystalline semiconductor layer.