US 5,348,910 A · Method of manufacturing a semiconductor device and the product thereby

Abstract

The present invention relates to a semiconductor device and a method for manufacturing the same comprising the steps of: forming an oxidation layer on the semiconductor substrate having a predetermined conductivity; introducing impurities having the same conductivity as that of the semiconductor substrate into the semiconductor substrate; forming an anti-oxidation layer on said oxidation layer; removing an arbitrary portion of said anti-oxidation layer; growing the oxidation layer by thermally oxidizing the semiconductor substrate to form the device isolation layer; and removing said anti-oxidation layer. Since the impurities are introduced into the region ranging from the device region to the device isolation region before the anti-oxidation layer is formed, the profile of the impurity concentration distribution in the boundary region between the device region and the device isolation region is smooth. Accordingly it is possible, for example, to prevent narrow channel effects of a transistor and to remove a bird's beak region simply.

Claims18

Dependent claims

A method of manufacturing a MOS-FET semiconductor device having a device isolation layer formed on a semiconductor substrate isolating a device region from a device isolation region, said method comprising the steps of:

(a) forming an oxidation layer on the semiconductor substrate having a predetermined conductivity;
(b) after step a, introducing impurities having the same conductivity as the semiconductor substrate into the semiconductor substrate, said impurities forming a channel stopper in the device isolation region and controlling a threshold voltage of the MOS-FET device in the device region;
(c) after step b, forming an anti-oxidation layer on said oxidation layer;
(d) after step c, removing an arbitrary portion of said anti-oxidation layer;
(e) after step d, thermally oxidizing the semiconductor substrate to grow a portion of said oxidation layer from which the anti-oxidation layer was removed in step d, to form the device isolation layer;
(f) after step e, removing said anti-oxidation layer;
and
(g) after step f, providing a gate electrode in the device region to form a MOS-FET transistor region, wherein performing step (b) prior to step (c) assures that no peak in a concentration profile of said impurities is formed in the border region between said device region and said device isolation region, thereby preventing the impurities from diffusing into said transistor region and avoiding a narrow channel effect in the MOS-FET device.

5 more elements

(a) introducing impurities having the same conductivity as the semiconductor substrate into the semiconductor substrate, said impurities acting as a channel stopper in the device isolation region and controlling a threshold voltage of the MOS-FET semiconductor device in the device region;
(b) after step (a), forming a first anti-oxidation layer on the semiconductor substrate;
(c) after step (b), forming an oxidation layer on said first anti-oxidation layer;
(d) after step (c), forming a second anti-oxidation layer on said oxidation layer;
(e) after step (d), removing an arbitrary portion of each of said first and second anti-oxidation layers formed to sandwich said oxidation layer;
(f) after step (e), forming the device isolation layer by thermally oxidizing the semiconductor substrate;
(g) after step (f), removing said first and second anti-oxidation layers formed to sandwich said oxidation layer;
and
(h) after step (g), providing a gate electrode in the device region to form a MOS-FET transistor region, wherein performing step (a) prior to steps (b), (c) and (d) assures that no peak in a concentration profile of said impurities is formed in a border region between said device region and said device isolation region, thereby preventing the impurities from diffusing into said transistor region and avoiding a narrow channel effect in the MOS-FET device.

6 more elements

Dependencies are inferred from the claim text.

Method of manufacturing a semiconductor device and the product thereby

Life of this patent

Method of manufacturing a semiconductor device and the product thereby

Life of this patent

Abstract

Claims18