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AssigneeDai Nippon Printing Co., Ltd.
InventorsOsamu Nakamura, Takeshi Ikegami
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The present invention relates to a method for manufacturing a shadow mask, which is satisfactory in terms of shape, linearity and dimensional accuracy of an etching hole when thickness of an electrode base material is about 20-80 .mu.m. According to the invention, resist is coated on both sides of a base material, and patterning is performed only on the resist on one side, the resist with electrode pattern is developed, and patterning is performed. The resist on the opposite side without electrode pattern is left all over the surface, and this is covered with a resin layer, which has anti-etching property, is resistible to spraying pressure during etching and has reinforcing property enough to maintain surface flatness of the base material to eliminate unstability of the base material by spraying pressure during etching, etching is performed only on one side of the base material from the patterned resist, and a shadow mask is obtained, which is satisfactory in shape, linearity and dimensional accuracy of the etching hole. The invention also discloses a method for forming an etching hole, which is dimensionally larger than the thickness of the electrode base material.
A method for manufacturing a shadow mask of 20-80 .mu.m in thickness, said method comprising the steps of:
A method for manufacturing a shadow mask of 20-80 .mu.m in thickness, said method comprising the steps of:
A method for manufacturing a shadow mask of 20-80 .mu.m in thickness, said method comprising the steps of:
Dependencies are inferred from the claim text.