X-ray exposure apparatus and semiconductor-device manufacturing method

A semiconductor device manufactured by a method comprising the steps of:

• preparing a mask having a circuit pattern, and a wafer;
• setting the mask and the wafer at predetermined positions, wherein at least the wafer is in atmosphere;
• detecting atmospheric pressure information in the vicinity of the wafer;
• calculating intensity information of x-rays irradiating the wafer, based on a result of said detecting step;
• and
• controlling an amount of x-ray exposure in accordance with a result of said calculating step.

An x-ray exposure method, comprising the steps of:

• setting a substrate at a predetermined position in atmosphere;
• detecting atmospheric pressure information in the vicinity of the substrate;
• calculating intensity information of x-rays irradiating the substrate, based on a result of said detecting step;
• and
• controlling an amount of x-ray exposure to the substrate in accordance with a result of said calculating step.

A semiconductor-device manufacturing method, comprising the steps of:

• preparing a mask having a circuit pattern, and a wafer;
• setting the mask and the wafer at predetermined positions, wherein at least the wafer is in atmosphere;
• detecting atmospheric pressure information in the vicinity of the wafer;
• calculating intensity information of x-rays irradiating the wafer, based on a result of said detecting step;
• and
• controlling an amount of x-ray exposure in accordance with a result of said calculating step.

An X-ray exposure apparatus comprising:

• a chuck for holding a substrate in atmosphere;
• adjustment means for adjusting an amount of X-ray exposure to the substrate;
• a detector for detecting information corresponding to atmospheric pressure of the atmosphere;
• and
• a controller for controlling said adjustment means in accordance with a detection output of said detector.

An X-ray exposure method comprising:

• holding a substrate in atmosphere;
• detecting information corresponding to atmospheric pressure of the atmosphere;
• and
• controlling an amount of X-ray exposure to the substrate in accordance with the atmospheric pressure information detected in said detecting step.